FDMC4435BZ

This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to
minimize the on−state resistance. This device is well suited for Power
Management and load switching applications common in Notebook
Computers and Portable Battery Packs.

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    SPECIFICATION

    • Max rDS(on) = 20 m at VGS = −10 V, ID = −8.5 A
    • Max rDS(on) = 37 m at VGS = −4.5 V, ID = −6.3 A
    • Extended VGSS Range (−25 V) for Battery Applications
    • High Performance Trench Technology for Extremely Low rDS(on)
    • High Power and Current Handling Capability
    • HBM ESD Protection Level > 7 kV Typical*
    • 100% UIL Tested
    • These Devices are Pb−Free and are RoHS Compliant