VOM618A-3T

The 110 °C rated VOM618A has a GaAs infrared emitting
diode emitter, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a 4 pin
100 mil lead pitch miniflat package. It features a high current
transfer ratio with low input current, low coupling
capacitance, and high isolation voltage.
These coupling devices are designed for signal transmission
between two electrically separated circuits.