IRF1310NSTRLPBF

N-Channel 100 V 42A (Tc) 3.8W (Ta), 160W (Tc) Surface Mount D2PAK

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    SPECIFICATION

    Mfr Infineon Technologies
    Series HEXFET®
    Packaging Tape & Reel (TR)
    Cut Tape (CT)
    Digi-Reel®
    Part Status Active
    FET Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) 100 V
    Current – Continuous Drain (Id) @ 25°C 42A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Rds On (Max) @ Id, Vgs 36mOhm @ 22A, 10V
    Vgs(th) (Max) @ Id 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
    Vgs (Max) ±20V
    Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 25 V
    FET Feature
    Power Dissipation (Max) 3.8W (Ta), 160W (Tc)
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Surface Mount
    Supplier Device Package D2PAK
    Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
    Base Product Number IRF1310