STD2N105K5

This very high voltage N-channel Power MOSFET is designed using MDmesh K5
technology based on an innovative proprietary vertical structure. The result is a
dramatic reduction in on-resistance and ultra-low gate charge for applications
requiring superior power density and high efficiency.

Category:

Download Details PDF

Notice:

In stock will ship in 2 days. Real-time inventory pls confirm with us.

INQUIRY ONLINE




    SPECIFICATION

    • Industry’s lowest RDS(on) x area
    • Industry’s best FoM (figure of merit)
    • Ultra-low gate charge
    • 100% avalanche tested
    • Zener-protected