PE42521C-Z

The PE42521 SPDT absorptive RF switch is designed for use in
test/ATE and other high performance wireless applications.
This broadband general purpose switch maintains excellent RF
performance and linearity from 9 kHz through 13 GHz. This
switch is a pin-compatible upgraded version of PE42552 with
fast switching time and higher power handling of 36 dBm
continuous wave (CW) and 38.5 dBm instantaneous power in
50Ω @ 4 GHz. The PE42521 exhibits high isolation, fast settling
time, and is offered in a 3×3 mm QFN package.
The PE42521 is manufactured on pSemi’s UltraCMOS®
process,
a patented variation of silicon-on-insulator (SOI) technology on
a sapphire substrate, offering the performance of GaAs with
the economy and integration of conventional CMOS

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    SPECIFICATION

    • HaRP™ technology enhanced
    • Fast settling time of 2 s
    • No gate and phase lag
    • No drift in insertion loss and phase
    • Fast switching time of 500 ns
    • High power handling @ 4 GHz in 50Ω
    • 36 dBm CW
    • 38.5 dBm instantaneous power
    • 26 dBm terminated port
    • High linearity
    • 65 dBm IIP3
    • Low insertion loss
    • 0.75 dB @ 3 GHz
    • 1.15 dB @ 10 GHz
    • 1.85 dB @ 13 GHz
    • High isolation
    • 44 dB @ 3 GHz
    • 30 dB @ 10 GHz
    • 17 dB @ 13 GHz
    • ESD performance
    • 3kV HBM on RF pins to GND
    • 1.5kV HBM on all pins