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    NDS356AP

    SuperSOTTM-3 P-Channel logic level enhancement mode
    power field effect transistors are produced using ON
    Semiconductor’s proprietary, high cell density, DMOS
    technology. This very high density process is especially
    tailored to minimize on-state resistance. These devices are
    particularly suited for low voltage applications such as
    notebook computer power management, portable electronics,
    and other battery powered circuits where fast high-side
    switching, and low in-line power loss are needed in a
    very small outline surface mount package.

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      SPECIFICATION

      -1.1 A, -30 V, RDS(ON) = 0.3 Ω @ VGS=-4.5 V
      RDS(ON) = 0.2 Ω @ VGS=-10 V.
      Industry standard outline SOT-23 surface mount package
      using proprietary SuperSOTTM-3 design for superior
      thermal and electrical capabilities.
      High density cell design for extremely low RDS(ON).
      Exceptional on-resistance and maximum DC current
      capability.