CGHV14250F

The CGHV14250 is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically with high efficiency, high gain
and wide bandwidth capabilities, which makes the CGHV14250 ideal for
DC – 1.6 GHz L-Band radar amplifier applications. The transistor could
be utilized for band specific applications ranging from 0.9 through 1.8
GHz. The package options are ceramic/metal flange and pill package.