• HaRP™ technology enhanced
• Fast settling time of 2 s
• No gate and phase lag
• No drift in insertion loss and phase
• Fast switching time of 500 ns
• High power handling @ 4 GHz in 50Ω
• 36 dBm CW
• 38.5 dBm instantaneous power
• 26 dBm terminated port
• High linearity
• 65 dBm IIP3
• Low insertion loss
• 0.75 dB @ 3 GHz
• 1.15 dB @ 10 GHz
• 1.85 dB @ 13 GHz
• High isolation
• 44 dB @ 3 GHz
• 30 dB @ 10 GHz
• 17 dB @ 13 GHz
• ESD performance
• 3kV HBM on RF pins to GND
• 1.5kV HBM on all pins