IMW120R060M1HXKSA1

IMW120R060M1HXKSA1

零件编号: IMW120R060M1HXKSA1
产品分类: 固态继电器(SSR)
制造商: AIC tech
描述: SICFET N-CH 1.2KV 36A TO247-3
包装: -
ROHS状态: No
货币: USD
PDF: 资料
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
78mOhm @ 13A, 18V
Vgs(th) (Max) @ Id
5.7V @ 5.6mA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
1060 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41
Package / Case
Base Product Number
IMW120

规格