|
Packaging |
Tube
|
|
|
Part Status |
Active
|
|
|
Technology |
SiC (Silicon Carbide) Schottky |
|
|
Voltage - DC Reverse (Vr) (Max) |
650 V
|
|
|
Current - Average Rectified (Io) |
10A
|
|
|
Voltage - Forward (Vf) (Max) @ If |
1.7 V @ 10 A
|
|
|
Speed |
No Recovery Time > 500mA (Io)
|
|
|
Reverse Recovery Time (trr) |
0 ns
|
|
|
Current - Reverse Leakage @ Vr |
180 µA @ 650 V
|
|
|
Capacitance @ Vr, F |
300pF @ 1V, 1MHz
|
|
|
Mounting Type |
Through Hole |
|
|
Package / Case |
TO-220-2 |
|
|
Supplier Device Package |
PG-TO220-2-1
|
|
|
Operating Temperature - Junction |
-55°C ~ 175°C
|
|
|
Base Product Number |
IDH10G65 |