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IPD25N06S4L30ATMA2

  • image of Integrated circuits>IPD25N06S4L30ATMA2
  • image of Integrated circuits>IPD25N06S4L30ATMA2
IPD25N06S4L30ATMA2
1
Infineon
N-Channel 60 V 25A (Tc) 29W (Tc) Surface Mount PG-TO252-3-11
TO-252-3, DPak-2, SC-63
5000
YES
-

Category

Transistors - FETs, MOSFETs - Single

Mfr

Infineon Technologies

Series

AEC-Q101

Package

Tape & Reel (TR)

Cut Tape (CT)

Product Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60 V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

30mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.2V @ 8µA

Gate Charge (Qg) (Max) @ Vgs

16.3 nC @ 10 V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1220 pF @ 25 V

Power Dissipation (Max)

29W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3-11

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Base Product Number

IPD25N06


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